1 power transistors 2sd1275, 2sd1275a silicon npn triple diffusion planar type darlington f or p o w er amplification complementa r y to 2sb 0 949 ( 2sb949 ) and 2sb 0 949a ( 2sb949 a ) n features l high foward current transfer ratio h fe l high-speed switching l full-pack package which can be installed to the heat sink with one screw n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 60 80 60 80 5 4 2 35 2 150 C55 to +150 unit v v v a a w ?c ?c 2sd1275 2sd1275a 2sd1275 2sd1275a t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio base to emitter voltage collector to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i cbo i ceo i ebo v ceo h fe1 h fe2 * v be v ce(sat) f t t on t stg t f conditions v cb = 60v, i e = 0 v cb = 80v, i e = 0 v ce = 30v, i b = 0 v ce = 40v, i b = 0 v eb = 5v, i c = 0 i c = 30ma, i b = 0 v ce = 4v, i c = 1a v ce = 4v, i c = 2a v ce = 4v, i c = 2a i c = 2a, i b = 8ma v ce = 10v, i c = 0.5a, f = 1mhz i c = 2a, i b1 = 8ma, i b2 = C8ma, v cc = 50v min 60 80 1000 2000 typ 20 0.5 4 1 max 1 1 2 2 2 10000 2.8 2.5 unit ma ma ma v v v mhz m s m s m s 2sd1275 2sd1275a 2sd1275 2sd1275a 2sd1275 2sd1275a * h fe2 rank classification rank q p h fe2 2000 to 5000 4000 to 10000 internal connection b e c unit: mm 1:base 2:collector 3:emitter toC220 full pack package(a) 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip 4.0 0.5 +0.2 ?.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.25 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 f 3.1 0.1
2 power transistors 2sd1275, 2sd1275a p c ta i c v ce i c v be v ce(sat) i c h fe i c c ob v cb area of safe operation (aso) r th(t) t 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) with a 50 50 2mm al heat sink (4) without heat sink (p c =2w) (1) (2) (3) (4) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 06 5 4 13 2 0 5 4 3 2 1 t c =25?c i b =2.0ma 0.2ma 0.4ma 0.6ma 0.8ma 1.0ma 1.2ma 1.4ma 1.6ma 1.8ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 03.2 0.8 2.4 1.6 0 10 8 6 4 2 v ce =4v t c =100?c ?5?c 25?c base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =250 100?c 25?c t c =?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 10 10 2 10 3 10 4 10 5 v ce =4v 25?c ?5?c t c =100?c collector current i c ( a ) forward current transfer ratio h fe 0.1 1 10 100 0.3 3 30 1 3 10 30 100 300 1000 3000 10000 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25?c i cp i c t=10ms dc 1ms 2sd1275 2sd1275a collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 10 ? 10 ? 1 10 10 3 10 2 (1) without heat sink (2) with a 100 100 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w )
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